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| BSL302SN OptiMOS(R)2 Small-Signal-Transistor Features * N-channel * Enhancement mode * Logic level (4.5V rated) * Avalanche rated * dv /dt rated * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 25 38 7.1 A V m PG-TSOP-6 6 5 4 1 2 3 Type BSL302SN Package Tape and Reel Information Marking sPE Lead Free Yes Packing Non dry PG-TSOP-6 L6327 = 3000 pcs. / reel Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS dv /dt V GS P tot T j, T stg JESD22-A114-HBM T A=25 C T A=25 C I D=7.1 A, R GS=25 I D=7.5 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C Value 7.1 5.7 28 30 mJ Unit A Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 1.06 6 20 2 -55 ... 150 0 (0V to 250V) 260 C 55/150/56 kV/s V W C page 1 2010-03-26 BSL302SN Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint SMD version, device on PCB R thJS R thJA minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=VGS, I D=30 A V DS=20 V, V GS=0 V, T j=25 C V DS=20 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=5.7 A V GS=10 V, I D=7.1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.1 A 30 1.2 1.70 2 1 A V Values typ. max. Unit - - 50 230 62.5 K/W - 27 18 16 100 100 38 25 S nA m 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 1) 1.06 page 2 2010-03-26 BSL302SN Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=7.1 A, T j=25 C V R=15 V, I F=7.1 A, di F/dt =100 A/s 0.8 14.2 5.1 2.5 28 1.2 V ns nC A Q gs Q gd Qg V plateau V DD=15 V, I D=7.1 A, V GS=0 to 5 V 1.78 1.2 4.4 3.2 2.37 1.8 6.6 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=7.1 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 564 202 28 6.4 2.8 13.7 1.9 750 269 43 ns pF Values typ. max. Unit 1.06 page 3 2010-03-26 BSL302SN 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 8 2 7 1.6 6 5 P tot [W] I D [A] 0 40 80 120 160 1.2 4 0.8 3 2 0.4 1 0 0 0 40 80 120 160 T A [C] T A [C] 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 parameter: t p 102 limited by on-state resistance 1 s 10 s 0.5 Z thJA=f(t p) parameter: D =t p/T 102 10 1 100 s 0.2 10 ms 1 ms 10 1 Z thJA [K/W] 100 DC 0.1 0.05 I D [A] 0.02 10-1 100 0.01 10-2 single pulse 10-3 10 -2 10-1 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] 1.06 page 4 2010-03-26 BSL302SN 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 30 28 26 24 4.5 V 10 V 7V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 60 50 4V 3.5 V 22 20 40 I D [A] 16 14 12 10 8 6 4 2 0 0 1 R DS(on) [m] 18 3.7 V 3.7 V 4V 30 4.5 V 3.5 V 20 7V 10 V 10 3V 2.7 V 0 2 3 0 4 8 12 16 V DS [V] I D [A] 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 8 20 7 6 15 5 4 25 C g fs [S] 4 5 I D [A] 10 3 150 C 2 5 1 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 V GS [V] I D [A] 1.06 page 5 2010-03-26 BSL302SN 9 Drain-source on-state resistance R DS(on)=f(T j); I D=7.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=30 A parameter: I D 50 2.8 2.4 40 2 98 % R DS(on) [m] 98 % V GS(th) [V] 30 1.6 typ 20 typ 1.2 2% 0.8 10 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [C] T j [C] 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 104 102 101 103 Ciss 100 C [pF] Coss I F [A] 10-1 102 150 C Crss 25 C 150 C, 98% 25 C, 98% 10-2 101 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] 1.06 page 6 2010-03-26 BSL302SN 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=7.1 A pulsed parameter: V DD 10 9 25 C 8 7 100 C 24 V 6 100 V GS [V] I AV [A] 15 V 125 C 5 6V 4 3 2 1 10-1 100 101 102 103 0 0 2 4 6 8 10 t AV [s] Q gate [nC] 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 A 36 V GS 35 34 33 Qg V BR(DSS) [V] 32 31 30 29 28 V g s(th) Q g(th) 27 26 -60 -20 20 60 100 140 Q sw Q gs Q gd Q g ate T j [C] 1.06 page 7 2010-03-26 BSL302SN Package Outline: TSOP6 2.9 0.2 (2.25) (0.35) B 1.1 MAX. 0.1 MAX. 0.25 0.1 10 MAX. 2.5 0.1 1 2 3 0.35 +0.1 -0.05 0.95 1.9 0.2 M B 6x 0.15 +0.1 -0.06 0.2 M A A GPX09300 Footprint: Packaging: 0.5 4 1.9 2.9 0.2 0.95 Remark: Wave soldering possible dep. on customers process conditions HLG09283 Pin 1 marking 3.15 2.7 8 1.15 CPWG5899 Dimensions in mm 1.06 page 8 1.6 0.1 2010-03-26 6 5 4 10 MAX. BSL302SN Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user 1.06 page 9 2010-03-26 |
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